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- دیتاشیت TIP112G
TIP112G دیتاشیت
مشخصات دیتاشیت
| نام دیتاشیت | TIP112G |
|---|---|
| حجم فایل | 61.593 کیلوبایت |
| نوع فایل | |
| تعداد صفحات | 9 |
دانلود دیتاشیت TIP112G |
دانلود دیتاشیت |
|---|
سایر مستندات
TO220B03 Pkg Drawing 1 pages
TIP110-112,115-117 8 pages
مشخصات فنی
- RoHS: true
- Category: Triode/MOS Tube/Transistor/Darlington Transistors
- Datasheet: onsemi TIP112G
- Transistor Type: NPN
- Operating Temperature: -65°C~+150°C@(Tj)
- Collector Current (Ic): 2A
- Power Dissipation (Pd): 2W
- DC current gain (hFE@Vce,Ic): 1000@1A,4V
- Collector-emitter voltage (Vceo): 100V
- Collector cut-off current (Icbo@Vcb): 2mA
- Collector-emitter saturation voltage (VCE(sat)@Ic,Ib): 2.5V@8mA,2A
- Package: TO-220
- Manufacturer: onsemi
- Series: -
- Packaging: Bulk
- Part Status: Obsolete
- Current - Collector (Ic) (Max): 2A
- Voltage - Collector Emitter Breakdown (Max): 100V
- Vce Saturation (Max) @ Ib, Ic: 2.5V @ 8mA, 2A
- Current - Collector Cutoff (Max): 2mA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 1A, 4V
- Power - Max: 2W
- Frequency - Transition: -
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220-3
- Base Part Number: TIP112
- detail: Bipolar (BJT) Transistor NPN - Darlington 100V 2A 2W Through Hole TO-220-3